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GW calculation for boron nitride system

Posted: Mon Aug 15, 2011 7:59 pm
by cichia
I read the online instruction for VASP GW calculation, it seems that there are several steps to run the GW calculation:

1. perform a self consistent DFT run with LOPTICS = TRUE,
2. with the WAVEDER from the result of step 1 we do another calculation with ALGO = GW0, and still LOPTICS = TRUE.
3. with the CHGCAR from step 2, run a regular band calculation with ALGO = GW0.

Is my understanding correct?

However, in step 2, the calculation is stuck at the very beginning, where OUTCAR shows :

total amount of memory used by VASP on root node1536000. kBytes
========================================================================

base : 30000. kBytes
nonl-proj : 435402. kBytes
fftplans : 15229. kBytes
grid : 90210. kBytes
one-center: 421. kBytes
HF : 135. kBytes
nonlr-proj: 1947. kBytes
wavefun : 962656. kBytes

Broyden mixing: mesh for mixing (old mesh)
NGX = 41 NGY = 41 NGZ = 65
(NGX =128 NGY =128 NGZ =196)
gives a total of 109265 points

initial charge density was supplied:
charge density of overlapping atoms calculated
number of electron 216.0000000 magnetization
keeping initial charge density in first step


--------------------------------------------------------------------------------------------------------


Maximum index for augmentation-charges 851 (set IRDMAX)


--------------------------------------------------------------------------------------------------------


FEWALD: cpu time 0.01: real time 0.01

and it won't go any further.

Is it because that my unit cell is too big for this calculation. I am trying to run a 3x3 hexagonal boron nitride system which consists of 18 atoms.

Thank you

Re: GW calculation for boron nitride system

Posted: Tue Sep 10, 2024 2:15 pm
by support_vasp

Hi,

We're sorry that we didn’t answer your question. This does not live up to the quality of support that we aim to provide. The team has since expanded. If we can still help with your problem, please ask again in a new post, linking to this one, and we will answer as quickly as possible.

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